| PartNumber | SQM50N04-4m1_GE3 | SQM50P03-07-GE3 | SQM50N04-4M1-GE3 |
| Description | MOSFET 40V 50A 150W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQM50P03-07_GE3 | MOSFET RECOMMENDED ALT 781-SQM50N04-4M1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 105 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 200 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.068654 oz | 0.068654 oz | 0.068654 oz |