 |  |  | |
| PartNumber | SQJ418EP-T1_GE3 | SQJ418EP-T2_GE3 | SQJ418EP |
| Description | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | MOSFET 100V Vds 20V Vgs PowerPAK SO-8L | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 48 A | 48 A | - |
| Rds On Drain Source Resistance | 11 mOhms | 14 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 35 nC | 35 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 68 W | 68 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 31 S | 31 S | - |
| Fall Time | 19 ns | 19 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 19 ns | 19 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16 ns | 16 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Unit Weight | 0.017870 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ418EP-T1_GE3 | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | |
| SQJ418EP-T2_GE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8L | ||
| SQJ418EP | Nuevo y original |