SQ7414

SQ7414AENW-T1_GE3 vs SQ7414AEN-T1-GE3 vs SQ7414AEN-T1_GE3

 
PartNumberSQ7414AENW-T1_GE3SQ7414AEN-T1-GE3SQ7414AEN-T1_GE3
DescriptionMOSFET N Ch 60Vds 20Vgs AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ7414AEN-T1_GE3MOSFET N-CH 60V 5.6A PPAK 1212-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8PowerPAK-1212-8-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance16 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation62 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min50 S--
Fall Time15 ns--
Product TypeMOSFETMOSFET-
Rise Time13 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.006702 oz--
Height-1.04 mm-
Length-3.3 mm-
Width-3.3 mm-
Fabricante Parte # Descripción RFQ
Vishay
Vishay
SQ7414CENW-T1_GE3 MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
SQ7414AEN-T1_GE3 MOSFET N-CH 60V 5.6A PPAK 1212-8
Vishay / Siliconix
Vishay / Siliconix
SQ7414AENW-T1_GE3 MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
SQ7414AEN-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ7414AEN-T1_GE3
SQ7414AEN-T1-GE3 IGBT Transistors MOSFET N-Channel 60V Automotive MOSFET
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SQ7414AENW-T1-GE3 MOSFET 60V 16A 62W N-Ch Automotive
SQ7414EN Nuevo y original
SQ7414EN-T1-E3 MOSFET 60V 5.6A 1.5W 25mohm @ 10V
SQ7414EN-T1-GE3 Nuevo y original
SQ7414ENT1E3 Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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