SQ2309

SQ2309ES-T1_GE3 vs SQ2309ES-T1-GE3 vs SQ2309ES-T1-E3

 
PartNumberSQ2309ES-T1_GE3SQ2309ES-T1-GE3SQ2309ES-T1-E3
DescriptionMOSFET 60V -1.7A 2W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQ2309ES-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-236-3SOT-23-3-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1.7 A--
Rds On Drain Source Resistance268 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge8.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min1.8 S--
Fall Time9 ns--
Product TypeMOSFETMOSFET-
Rise Time9 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time5 ns--
Unit Weight0.000423 oz0.000282 oz-
Height-1.45 mm-
Length-2.9 mm-
Width-1.6 mm-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ2309ES-T1_GE3 MOSFET 60V -1.7A 2W AEC-Q101 Qualified
SQ2309ES-T1-GE3 MOSFET RECOMMENDED ALT 781-SQ2309ES-T1_GE3
SQ2309ES-T1-E3 Nuevo y original
SQ2309ES-T1-GE3 Trans MOSFET P-CH 60V 1.7A Automotive 3-Pin SOT-23 T/R
Vishay
Vishay
SQ2309ES-T1_GE3 MOSFET P-CHAN 60V SOT23
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