SPP80N03S2L-04

SPP80N03S2L-04 vs SPP80N03S2L-04 2N03L04 vs SPP80N03S2L-04(2N03L04)

 
PartNumberSPP80N03S2L-04SPP80N03S2L-04 2N03L04SPP80N03S2L-04(2N03L04)
DescriptionMOSFET N-Ch 30V 80A TO220-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance3.6 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge105 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation188 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesSPP80N03--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min11.5 S--
Fall Time19 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time54 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSP000013902 SPP80N03S2L04AKSA1 SPP8N3S2L4XK--
Unit Weight0.211644 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
SPP80N03S2L-04 MOSFET N-Ch 30V 80A TO220-3
SPP80N03S2L-04 IGBT Transistors MOSFET N-Ch 30V 80A TO220-3
SPP80N03S2L-04 2N03L04 Nuevo y original
SPP80N03S2L-04(2N03L04) Nuevo y original
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