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| PartNumber | SPP02N60C3XKSA1 | SPP02N60C3 | SPP02N60C3HKSA1 |
| Description | IGBT Transistors MOSFET N-Ch 650V 1.8A TO220-3 | Trans MOSFET N-CH 650V 1.8A 3-Pin TO-220 Tube - Bulk (Alt: SPP02N60C3) | MOSFET N-CH 650V 1.8A TO-220AB |
| Manufacturer | Infineon Technologies | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Series | SPP02N60 | - | - |
| Packaging | Tube | - | - |
| Part Aliases | SP000681014 SPP02N60C3 SPP02N60C3XK | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | TO-220-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 12 ns | - | - |
| Rise Time | 3 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.8 A | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 68 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Qg Gate Charge | 9.5 nC | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
SPP02N60C3XKSA1 | IGBT Transistors MOSFET N-Ch 650V 1.8A TO220-3 | |
| SPP02N60C3HKSA1 | MOSFET N-CH 650V 1.8A TO-220AB | ||
| SPP02N60S5HKSA1 | MOSFET N-CH 600V 1.8A TO-220 | ||
| SPP02N60C3 | Trans MOSFET N-CH 650V 1.8A 3-Pin TO-220 Tube - Bulk (Alt: SPP02N60C3) | ||
| SPP02N60S5 | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-220 Tube - Bulk (Alt: SPP02N60S5) | ||
| SPP02N60C3,02N60C3 | Nuevo y original | ||
| SPP02N60S5(02N60S5) | Nuevo y original |