SPN01N6

SPN01N60C3 vs SPN01N60C3,01N60C3 vs SPN01N60S5 E6327

 
PartNumberSPN01N60C3SPN01N60C3,01N60C3SPN01N60S5 E6327
DescriptionMOSFET N-Ch 650V 300mA SOT-223-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current300 mA--
Rds On Drain Source Resistance6 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time45 ns--
Part # AliasesSPN01N60C3XT--
Unit Weight0.003951 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
SPN01N60C3 MOSFET N-Ch 650V 300mA SOT-223-3
Infineon Technologies
Infineon Technologies
SPN01N60C3 MOSFET N-CH 650V 0.3A SOT-223
SPN01N60C3,01N60C3 Nuevo y original
SPN01N60S5 E6327 Nuevo y original
SPN01N60S5 Nuevo y original
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