 |  |  | |
| PartNumber | SPI10N10L | SPI10N10 | SPI10N60S5 |
| Description | MOSFET N-Ch 100V 10.3A I2PAK-3 | MOSFET N-CH 100V 10.3A I2PAK | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 10.3 A | - | - |
| Rds On Drain Source Resistance | 154 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 17.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 4.7 S | - | - |
| Fall Time | 17.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 19.1 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27.8 ns | - | - |
| Typical Turn On Delay Time | 4.6 ns | - | - |
| Unit Weight | 0.084199 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
SPI10N10L | MOSFET N-Ch 100V 10.3A I2PAK-3 | |
Infineon Technologies |
SPI10N10 | MOSFET N-CH 100V 10.3A I2PAK | |
| SPI10N10L | MOSFET N-CH 100V 10.3A I2PAK | ||
| SPI10N60S5 | Nuevo y original |