 |  | |
| PartNumber | SPD15P10PGBTMA1 | SPD15P10PG |
| Description | MOSFET P-Ch -100V 15A DPAK-2 | Trans MOSFET P-CH 100V 15A 3-Pin TO-252 T/R (Alt: SP000212233) |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 15 A | - |
| Rds On Drain Source Resistance | 160 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 48 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 128 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | - |
| Length | 6.5 mm | - |
| Series | XPD15P10 | XPD15P10 |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 4.7 S | - |
| Fall Time | 16 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 23 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | - |
| Typical Turn On Delay Time | 9.5 ns | - |
| Part # Aliases | G SP000212233 SPD15P10P SPD15P1PGXT | - |
| Unit Weight | 0.139332 oz | - |
| Part Aliases | - | G SP000212233 SPD15P10P SPD15P10PGXT |
| Package Case | - | TO-252-3 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD15P10PGBTMA1 | MOSFET P-Ch -100V 15A DPAK-2 | |
| SPD15P10PGBTMA1 | MOSFET P-CH 100V 15A TO252-3 | ||
| SPD15P10PG | Trans MOSFET P-CH 100V 15A 3-Pin TO-252 T/R (Alt: SP000212233) |