SPB18P06PG

SPB18P06PGATMA1 vs SPB18P06PGATMA1-CUT TAPE vs SPB18P06PG

 
PartNumberSPB18P06PGATMA1SPB18P06PGATMA1-CUT TAPESPB18P06PG
DescriptionMOSFET P-Ch -60V 18.6A D2PAK-2Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ManufacturerInfineon-INF
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current18.7 A--
Rds On Drain Source Resistance101 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge- 28 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation81.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesXPB18P06--
Transistor Type1 P-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min5 S--
Fall Time11 ns--
Product TypeMOSFET--
Rise Time5.8 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesG SP000102181 SPB18P06P SPB18P6PGXT--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
SPB18P06PGATMA1 MOSFET P-Ch -60V 18.6A D2PAK-2
SPB18P06PGATMA1 MOSFET P-CH 60V 18.7A TO-263
SPB18P06PGATMA1-CUT TAPE Nuevo y original
SPB18P06PG Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SPB18P06PGS Nuevo y original
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