SPB11N6

SPB11N60C3 vs SPB11N60C3ATMA1 vs SPB11N60S5ATMA1

 
PartNumberSPB11N60C3SPB11N60C3ATMA1SPB11N60S5ATMA1
DescriptionMOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3MOSFET LOW POWER_LEGACYMOSFET N-CH 600V 11A TO-263
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TO-263-3TO-263-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance380 mOhms--
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge45 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOSCoolMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesCoolMOS C3--
Transistor Type1 N-Channel--
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min8.3 S--
Fall Time5 ns--
Product TypeMOSFETMOSFET-
Rise Time5 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time44 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSP000013519 SPB11N60C3ATMA1 SPB11N6C3XTSP000013519 SPB11N60C3 SPB11N6C3XT-
Unit Weight0.139332 oz0.139332 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
SPB11N60C3 MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3
SPB11N60S5ATMA1 MOSFET N-CH 600V 11A TO-263
SPB11N60C3ATMA1 MOSFET N-CH 650V 11A D2PAK
Infineon Technologies
Infineon Technologies
SPB11N60C3ATMA1 MOSFET LOW POWER_LEGACY
SPB11N60S5 MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS S5
SPB11N60C2 - Bulk (Alt: SPB11N60C2)
SPB11N60C3 Trans MOSFET N-CH 600V 11A 3-Pin TO-263 T/R (Alt: SP000013519)
SPB11N60C3 11N60 Nuevo y original
SPB11N60C3,11N60C3 Nuevo y original
SPB11N60C5 Nuevo y original
SPB11N60S5E3045 Nuevo y original
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