| PartNumber | SMBTA42E6327HTSA1 | SMBTA56E6327HTSA1 | SMBTA56E6433HTMA1 |
| Description | Bipolar Transistors - BJT NPN 300 V 500 mA | Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A | Bipolar Transistors - BJT AF TRANSISTORS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | NPN | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 300 V | 80 V | - |
| Collector Base Voltage VCBO | 300 V | 80 V | - |
| Emitter Base Voltage VEBO | 6 V | 4 V | - |
| Collector Emitter Saturation Voltage | 0.5 V | 0.25 V | - |
| Gain Bandwidth Product fT | 70 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | SMBTA42 | SMBTA56 | - |
| Packaging | Reel | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Continuous Collector Current | 500 mA | 500 mA | - |
| Pd Power Dissipation | 360 mW | 330 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 42 E6327 SMBTA SMBTA42E6327XT SP000011000 | 56 E6327 SMBTA SMBTA56E6327XT SP000011692 | 56 E6433 SMBTA SMBTA56E6433XT SP000011695 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.050717 oz |
| Maximum DC Collector Current | - | 1 A | - |
| Height | - | 1 mm | - |
| Length | - | 2.9 mm | - |
| Width | - | 1.3 mm | - |
| Qualification | - | AEC-Q101 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
SMBTA42E6327HTSA1 | Bipolar Transistors - BJT NPN 300 V 500 mA | |
| SMBTA92E6327HTSA1 | Bipolar Transistors - BJT AF TRANS GP BJT PNP 300V 0.5A | ||
| SMBTA64E6327 | TRANS PNP DARL 30V 0.5A SOT-23 | ||
| SMBTA42E6327HTSA1 | TRANS NPN 300V 0.5A SOT-23 | ||
| SMBTA56E6327HTSA1 | TRANS PNP 80V 0.5A SOT-23 | ||
| SMBTA56E6433HTMA1 | TRANS PNP 80V 0.5A SOT-23 | ||
| SMBTA92E6327HTSA1 | TRANS PNP 300V 0.5A SOT-23 | ||
Infineon Technologies |
SMBTA56E6327HTSA1 | Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A | |
| SMBTA56E6433HTMA1 | Bipolar Transistors - BJT AF TRANSISTORS | ||
| SMBTA42E6327 | Nuevo y original | ||
| SMBTA56E6327 | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | ||
| SMBTA56E6433 | Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R - Bulk (Alt: SMBTA56E6433) | ||
| SMBTA92E6327 | Trans GP BJT PNP 300V 0.5A 3-Pin SOT-23 T/R (Alt: SP000011004) | ||
| SMBTA42 E6327 | Nuevo y original | ||
| SMBTA42 E6327 SOT23-S1 | Nuevo y original | ||
| SMBTA42E6327 (INFINEON) | Nuevo y original | ||
| SMBTA42M | Nuevo y original | ||
| SMBTA42M E6327 | Nuevo y original | ||
| SMBTA42ME6327 | Nuevo y original | ||
| SMBTA56 | Bipolar Junction Transistor, PNP Type, TO-236AB | ||
| SMBTA56 / MMBTA56 | Nuevo y original | ||
| SMBTA56 E6327 | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR | ||
| SMBTA56 E6327(S2G) | Nuevo y original | ||
| SMBTA56 E6372 | Nuevo y original | ||
| SMBTA56 E6433 | Nuevo y original | ||
| SMBTA63 | Nuevo y original | ||
| SMBTA92 | SMALL SIGNAL TRANSISTOR, TO-236 | ||
| SMBTA92 E6327 | Nuevo y original | ||
| SMBTA92 , MAX6463XR22 | Nuevo y original | ||
| SMBTA92(2D) | Nuevo y original | ||
| SMBTA92E6327 (INFINEON) | Nuevo y original | ||
| SMBTA92M | Nuevo y original | ||
| SMBTA93 | Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon | ||
| SMBTA93 , MAX6425UK28 | Nuevo y original | ||
| SMBTAE6327 | Nuevo y original |