SIUD40

SIUD401ED-T1-GE3 vs SIUD402ED-T1-GE3 vs SIUD403ED-T1-GE3

 
PartNumberSIUD401ED-T1-GE3SIUD402ED-T1-GE3SIUD403ED-T1-GE3
DescriptionMOSFET -30V Vds; +/-12V Vgs PowerPAK 0806MOSFET 20V Vds 8V Vgs PowerPAK 0806MOSFET P-CH 20V 500MA PWRPAK0806
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-0806-3PowerPAK-0806-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V20 V-
Id Continuous Drain Current- 0.5 A1 A-
Rds On Drain Source Resistance1.573 Ohms730 mOhms-
Vgs th Gate Source Threshold Voltage- 0.6 V400 mV-
Vgs Gate Source Voltage12 V8 V-
Qg Gate Charge2 nC0.75 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.25 W1.25 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET; PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
Transistor Type1 P-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min0.65 S1.2 S-
Fall Time5 ns7 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns10 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15 ns23 ns-
Typical Turn On Delay Time5 ns7 ns-
Height-0.4 mm-
Length-0.8 mm-
Series-SIU-
Width-0.6 mm-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SIUD401ED-T1-GE3 MOSFET -30V Vds; +/-12V Vgs PowerPAK 0806
SIUD402ED-T1-GE3 MOSFET 20V Vds 8V Vgs PowerPAK 0806
SIUD406ED-T1-GE3 MOSFET 30V Vds; 8V Vgs PowerPAK 0806
Vishay
Vishay
SIUD402ED-T1-GE3 MOSFET N-CH 20V 1A POWERPAK0806
SIUD403ED-T1-GE3 MOSFET P-CH 20V 500MA PWRPAK0806
SIUD403ED-GE3 Nuevo y original
Top