PartNumber | SIS434DN-T1-GE3 | SIS435DNT-T1-GE3 | SIS436DN-T1-GE3 |
Description | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T | MOSFET RECOMMENDED ALT 781-SI7716ADN-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 20 V | - |
Id Continuous Drain Current | 35 A | 30 A | - |
Rds On Drain Source Resistance | 6.3 mOhms | 4.4 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 900 mV | - |
Vgs Gate Source Voltage | 20 V | 8 V | - |
Qg Gate Charge | 40 nC | 180 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 52 W | 39 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | - | - |
Length | 3.3 mm | - | - |
Series | SIS | SIS | SIS |
Transistor Type | 1 N-Channel | 1 P-Channel | - |
Width | 3.3 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 60 S | 55 S | - |
Fall Time | 12 ns | 30 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 30 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns | 100 ns | - |
Typical Turn On Delay Time | 20 ns | 40 ns | - |
Part # Aliases | SIS434DN-GE3 | - | SIS436DN-GE3 |