| PartNumber | SIS472DN-T1-GE3 | SIS472ADN-T1-GE3 | SIS472BDN-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | 1.04 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | SIS | SIS | SIS |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SIS472DN-GE3 | - | - |
| Unit Weight | 0.017637 oz | - | - |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 38.3 A |
| Rds On Drain Source Resistance | - | - | 7.5 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 1.2 V |
| Vgs Gate Source Voltage | - | - | 20 V, - 16 V |
| Qg Gate Charge | - | - | 21.5 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 19.8 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Forward Transconductance Min | - | - | 54 S |
| Fall Time | - | - | 7 ns |
| Rise Time | - | - | 10 ns |
| Typical Turn Off Delay Time | - | - | 15 ns |
| Typical Turn On Delay Time | - | - | 15 ns |