 |  | | |
| PartNumber | SIR862DP-T1-GE3 | SIR860-T1-GE3 | SIR862DP-T1-E3 |
| Description | IGBT Transistors MOSFET 25V 50A 69W | ||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | TrenchFET | - | - |
| Package Case | SO-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 5.2 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 32 A | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Rds On Drain Source Resistance | 2.8 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay |
SIR862DP-T1-GE3 | IGBT Transistors MOSFET 25V 50A 69W | |
| SIR864DP-T1-GE3 | MOSFET N-CH 30V 40A PPAK 8SO | ||
| SIR866DP-T1-GE3 | MOSFET N-CH 20V 60A PPAK SO-8 | ||
| SIR860-T1-GE3 | Nuevo y original | ||
| SIR862DP-T1-E3 | Nuevo y original | ||
| SIR864DP | Nuevo y original | ||
| SIR864DP-T1-E3 | Nuevo y original | ||
| SIR866DP | Nuevo y original | ||
| SIR866DP-T1-E3 | Nuevo y original | ||
| SIR866DPT1GE3 | Power Field-Effect Transistor, 39A I(D), 20V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |