SIR468DP-T

SIR468DP-T1-E3 vs SIR468DP-T1-GE vs SIR468DP-T1-GE3

 
PartNumberSIR468DP-T1-E3SIR468DP-T1-GESIR468DP-T1-GE3
DescriptionMOSFET N-CH 30V 40A PPAK SO-8
ManufacturerVISHAY-Vishay Siliconix
Product CategoryIC Chips-FETs - Single
Series--TrenchFETR
Packaging--Digi-ReelR Alternate Packaging
Part Aliases--SIR468DP-GE3
Unit Weight--0.017870 oz
Mounting Style--SMD/SMT
Package Case--PowerPAKR SO-8
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--PowerPAKR SO-8
Configuration--Single Quad Drain Triple Source
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--50W
Transistor Type--1 N-Channel
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--1720pF @ 15V
FET Feature--Standard
Current Continuous Drain Id 25°C--40A (Tc)
Rds On Max Id Vgs--5.7 mOhm @ 20A, 10V
Vgs th Max Id--3V @ 250μA
Gate Charge Qg Vgs--44nC @ 10V
Pd Power Dissipation--50 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--9 ns
Rise Time--9 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--40 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--5.7 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--27 ns
Typical Turn On Delay Time--11 ns
Qg Gate Charge--13.8 nC
Forward Transconductance Min--90 S
Channel Mode--Enhancement
Fabricante Parte # Descripción RFQ
SIR468DP-T1-E3 Nuevo y original
SIR468DP-T1-GE Nuevo y original
SIR468DP-T1-GE3.. Nuevo y original
Vishay
Vishay
SIR468DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
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