 | | |
| PartNumber | SIHW47N60EF-GE3 | SIHW47N60E-GE3 |
| Description | MOSFET RECOMMENDED ALT 78-SIHG47N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-247AD |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Packaging | Bulk | Tube |
| Series | EF | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 480 | 480 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 1.340411 oz | 1.340411 oz |
| Mounting Style | - | Through Hole |
| Package / Case | - | TO-247AD-3 |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 600 V |
| Id Continuous Drain Current | - | 47 A |
| Rds On Drain Source Resistance | - | 65 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Vgs Gate Source Voltage | - | 30 V |
| Qg Gate Charge | - | 152 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 379 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Fall Time | - | 56 ns |
| Rise Time | - | 56 ns |
| Typical Turn Off Delay Time | - | 91 ns |
| Typical Turn On Delay Time | - | 30 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHW47N60EF-GE3 | MOSFET RECOMMENDED ALT 78-SIHG47N60EF-GE3 | |
| SIHW47N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AD | ||
Vishay |
SIHW47N60EF-GE3 | RF Bipolar Transistors MOSFET 600V 67mOhms@10V 47A N-Ch EF-SRS | |
| SIHW47N60E-GE3 | MOSFET N-CH 600V 47A TO-247AD | ||
| SIHW47N60E | Nuevo y original |