PartNumber | SIHW47N60EF-GE3 | SIHW47N60E-GE3 | SIHW47N65E-GE3 |
Description | MOSFET RECOMMENDED ALT 78-SIHG47N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-247AD | MOSFET 650V 72mOhm@10V 47A N-Ch E-SRS |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Packaging | Bulk | Tube | Bulk |
Series | EF | E | E |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 480 | 480 | 480 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-247AD-3 | TO-247AD-3 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 600 V | 650 V |
Id Continuous Drain Current | - | 47 A | 47 A |
Rds On Drain Source Resistance | - | 65 mOhms | 72 mOhms |
Vgs th Gate Source Threshold Voltage | - | 4 V | 4 V |
Vgs Gate Source Voltage | - | 30 V | 20 V |
Qg Gate Charge | - | 152 nC | 182 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 379 W | 417 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | 56 ns | 103 ns |
Rise Time | - | 56 ns | 87 ns |
Typical Turn Off Delay Time | - | 91 ns | 156 ns |
Typical Turn On Delay Time | - | 30 ns | 47 ns |