SIHW4

SIHW47N60EF-GE3 vs SIHW47N60E-GE3 vs SIHW47N65E-GE3

 
PartNumberSIHW47N60EF-GE3SIHW47N60E-GE3SIHW47N65E-GE3
DescriptionMOSFET RECOMMENDED ALT 78-SIHG47N60EF-GE3MOSFET 600V Vds 30V Vgs TO-247ADMOSFET 650V 72mOhm@10V 47A N-Ch E-SRS
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
PackagingBulkTubeBulk
SeriesEFEE
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity480480480
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Mounting Style-Through HoleThrough Hole
Package / Case-TO-247AD-3TO-247AD-3
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-600 V650 V
Id Continuous Drain Current-47 A47 A
Rds On Drain Source Resistance-65 mOhms72 mOhms
Vgs th Gate Source Threshold Voltage-4 V4 V
Vgs Gate Source Voltage-30 V20 V
Qg Gate Charge-152 nC182 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-379 W417 W
Configuration-SingleSingle
Channel Mode-EnhancementEnhancement
Fall Time-56 ns103 ns
Rise Time-56 ns87 ns
Typical Turn Off Delay Time-91 ns156 ns
Typical Turn On Delay Time-30 ns47 ns
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHW47N60EF-GE3 MOSFET RECOMMENDED ALT 78-SIHG47N60EF-GE3
SIHW47N60E-GE3 MOSFET 600V Vds 30V Vgs TO-247AD
SIHW47N65E-GE3 MOSFET 650V 72mOhm@10V 47A N-Ch E-SRS
Vishay
Vishay
SIHW47N65E-GE3 RF Bipolar Transistors MOSFET 650V 72mOhm@10V 47A N-Ch E-SRS
SIHW47N60EF-GE3 RF Bipolar Transistors MOSFET 600V 67mOhms@10V 47A N-Ch EF-SRS
SIHW47N60E-GE3 MOSFET N-CH 600V 47A TO-247AD
SIHW47N60E Nuevo y original
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