 |  |  | |
| PartNumber | SIHP25N40D-GE3 | SIHP25N40D | SIHP25N40D-E3 |
| Description | MOSFET 400V Vds 30V Vgs TO-220AB | Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 400 V | - | - |
| Id Continuous Drain Current | 25 A | - | - |
| Rds On Drain Source Resistance | 170 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 44 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 278 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | D | - | - |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 37 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 57 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 21 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP25N40D-GE3 | MOSFET 400V Vds 30V Vgs TO-220AB | |
Vishay |
SIHP25N40D-GE3 | Darlington Transistors MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS | |
| SIHP25N40D-E3 | Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB | ||
| SIHP25N40D | Nuevo y original | ||
| SIHP25N40DGE3 | Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |