PartNumber | SIHP17N60D-E3 | SIHP17N60D-GE3 |
Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 17 A | 17 A |
Rds On Drain Source Resistance | 340 mOhms | 340 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | 5 V |
Vgs Gate Source Voltage | 30 V | 30 V |
Qg Gate Charge | 45 nC | 45 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 277.8 W | 277.8 W |
Channel Mode | Enhancement | Enhancement |
Packaging | Tube | Tube |
Series | D | D |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 30 ns | 30 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 56 ns | 56 ns |
Factory Pack Quantity | 50 | 50 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 37 ns | 37 ns |
Typical Turn On Delay Time | 22 ns | 22 ns |
Unit Weight | 0.211644 oz | 0.211644 oz |