SIHP17 stock, SIHP17, SIHP17N80E-GE3


PartNumber	SIHP17N80E-GE3	SIHP17N60D-E3	SIHP17N60D-GE3
Description	MOSFET 800V Vds 30V Vgs TO-220AB	MOSFET 600V Vds 30V Vgs TO-220AB	MOSFET 600V Vds 30V Vgs TO-220AB
Manufacturer	Vishay	Vishay	Vishay
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220AB-3	TO-220AB-3	TO-220AB-3
Number of Channels	1 Channel	-	-
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	800 V	600 V	600 V
Id Continuous Drain Current	15 A	17 A	17 A
Rds On Drain Source Resistance	250 mOhms	340 mOhms	340 mOhms
Vgs th Gate Source Threshold Voltage	4 V	5 V	5 V
Vgs Gate Source Voltage	30 V	30 V	30 V
Qg Gate Charge	122 nC	45 nC	45 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	208 W	277.8 W	277.8 W
Configuration	Single	-	-
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Tube	Tube	Tube
Series	E	D	D
Transistor Type	1 N-Channel	-	-
Brand	Vishay / Siliconix	Vishay / Siliconix	Vishay / Siliconix
Fall Time	26 ns	30 ns	30 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	24 ns	56 ns	56 ns
Factory Pack Quantity	50	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	71 ns	37 ns	37 ns
Typical Turn On Delay Time	22 ns	22 ns	22 ns
Unit Weight	0.063493 oz	0.211644 oz	0.211644 oz

Search Part Number : "SIHP17", Match & Start with "SIHP17" - Total : 7

Fabricante	Parte #	Descripción
Vishay / Siliconix	SIHP17N80E-GE3	MOSFET 800V Vds 30V Vgs TO-220AB
	SIHP17N60D-E3	MOSFET 600V Vds 30V Vgs TO-220AB
	SIHP17N60D-GE3	MOSFET 600V Vds 30V Vgs TO-220AB
Vishay	SIHP17N60D-E3	IGBT Transistors MOSFET 600V 340mOhm@10V 17A N-Ch D-SRS
	SIHP17N60D-GE3	RF Bipolar Transistors MOSFET 600V 17A 277.8W 340mOhm @10V
	SIHP17N80E-GE3	MOSFET N-CH 800V 15A TO220AB
	SIHP17N60D	Nuevo y original

SIHP17