SIHG24

SIHG24N65E-GE3 vs SIHG24N65E-E3 vs SIHG24N65EF-GE3

 
PartNumberSIHG24N65E-GE3SIHG24N65E-E3SIHG24N65EF-GE3
DescriptionMOSFET 650V Vds 30V Vgs TO-247ACMOSFET 650V Vds 30V Vgs TO-247ACMOSFET 650V Vds 30V Vgs TO-247AC
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3TO-247AC-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current24 A24 A-
Rds On Drain Source Resistance145 mOhms145 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge81 nC81 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTubeTube
Height20.82 mm20.82 mm-
Length15.87 mm15.87 mm-
SeriesEESIH
Width5.31 mm5.31 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time69 ns69 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time84 ns84 ns-
Factory Pack Quantity500500500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time70 ns70 ns-
Typical Turn On Delay Time24 ns24 ns-
Unit Weight1.340411 oz1.340411 oz-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHG24N65E-GE3 MOSFET 650V Vds 30V Vgs TO-247AC
SIHG24N65E-E3 MOSFET 650V Vds 30V Vgs TO-247AC
SIHG24N65EF-GE3 MOSFET 650V Vds 30V Vgs TO-247AC
Vishay
Vishay
SIHG24N65E-E3 RF Bipolar Transistors MOSFET N-Channel 650V
SIHG24N65E-GE3 MOSFET N-CH 650V 24A TO247AC
SIHG24N65EF-GE3 MOSFET N-CH 650V 24A TO247AC
SIHG24N65E Nuevo y original
SIHG24N65E G24N65E Nuevo y original
Top