SIHFR43

SIHFR430ATR-GE3 vs SIHFR430ATRL-GE3 vs SIHFR430ATRR-GE3

 
PartNumberSIHFR430ATR-GE3SIHFR430ATRL-GE3SIHFR430ATRR-GE3
DescriptionMOSFET 500V Vds 30V Vgs DPAK (TO-252)MOSFET 500V Vds 30V Vgs DPAK (TO-252)MOSFET 500V Vds 30V Vgs DPAK (TO-252)
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V500 V
Id Continuous Drain Current5 A5 A5 A
Rds On Drain Source Resistance1.7 Ohms1.7 Ohms1.7 Ohms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge24 nC24 nC24 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation110 W110 W110 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
Height2.38 mm--
Length6.73 mm--
SeriesSIHSIHSIH
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min2.3 S2.3 S2.3 S
Fall Time16 ns16 ns16 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns27 ns27 ns
Factory Pack Quantity130003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time17 ns17 ns17 ns
Typical Turn On Delay Time8.7 ns8.7 ns8.7 ns
Packaging-ReelReel
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHFR430ATR-GE3 MOSFET 500V Vds 30V Vgs DPAK (TO-252)
SIHFR430ATRL-GE3 MOSFET 500V Vds 30V Vgs DPAK (TO-252)
SIHFR430ATRR-GE3 MOSFET 500V Vds 30V Vgs DPAK (TO-252)
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