SIA90

SIA906EDJ-T1-GE3 vs SIA907EDJ-T1-GE3 vs SIA907EDJ-T4-GE3

 
PartNumberSIA906EDJ-T1-GE3SIA907EDJ-T1-GE3SIA907EDJ-T4-GE3
DescriptionMOSFET 20V Vds 12V Vgs PowerPAK SC-70MOSFET N-CH 30V SMDMOSFET N-CH 30V SMD
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SC70-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance46 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge0.95 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation7.8 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height0.75 mm--
Length2.05 mm--
SeriesSIA--
Transistor Type2 N-Channel--
Width2.05 mm--
BrandVishay / Siliconix--
Forward Transconductance Min14 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time18 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSIA906EDJ-GE3--
Unit Weight0.000988 oz--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SIA907EDJT-T1-GE3 MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70
SIA906EDJ-T1-GE3 MOSFET 20V Vds 12V Vgs PowerPAK SC-70
Vishay
Vishay
SIA906EDJ-T1-GE3 IGBT Transistors MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
SIA907EDJT-T1-GE3 MOSFET 2P-CH 20V 4.5A SC-70-6L
SIA907EDJ-T1-GE3 MOSFET N-CH 30V SMD
SIA907EDJ-T4-GE3 MOSFET N-CH 30V SMD
SIA903DJ Nuevo y original
SIA906EDJ Nuevo y original
SIA906EDJ-T1-E3 Nuevo y original
SIA906EDJ-T4-GE3 Nuevo y original
SIA907EDJT Nuevo y original
SIA907EDJT-T4-GE3 Nuevo y original
Top