SIA47

SIA471DJ-T1-GE3 vs SIA477EDJ-T1-GE3 vs SIA472EDJ-T1-GE3

 
PartNumberSIA471DJ-T1-GE3SIA477EDJ-T1-GE3SIA472EDJ-T1-GE3
DescriptionMOSFET Pch 30V Vds 20V Vgs PowerPAK SC-70-6LMOSFET 12V [email protected] 12A P-ChMOSFET 30V Vds TrenchFET PowerPAK SC-70-6L
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK SC-70PowerPAK-SC70-6PowerPAK-SC70-6
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelN-Channel
Vds Drain Source Breakdown Voltage- 30 V12 V30 V
Id Continuous Drain Current- 30.3 A12 A12 A
Rds On Drain Source Resistance11.5 mOhms11.6 mOhms16.7 mOhms
Vgs th Gate Source Threshold Voltage- 2.5 V1 V600 mV
Vgs Gate Source Voltage20 V8 V12 V
Qg Gate Charge18.5 nC87 nC36 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesSIASIASIA
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time18 ns45 ns26 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time95 ns28 ns23 ns
Factory Pack Quantity300030006000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time40 ns74 ns26 ns
Typical Turn On Delay Time25 ns30 ns10 ns
Pd Power Dissipation-19 W19.2 W
Tradename-TrenchFET, PowerPAKTrenchFET
Transistor Type-1 P-Channel-
Forward Transconductance Min-31 S50 S
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SIA471DJ-T1-GE3 MOSFET Pch 30V Vds 20V Vgs PowerPAK SC-70-6L
SIA477EDJT-T1-GE3 MOSFET -12V Vds 8V Vgs PowerPAK SC-70-6L
SIA477EDJ-T1-GE3 MOSFET 12V [email protected] 12A P-Ch
SIA472EDJ-T1-GE3 MOSFET 30V Vds TrenchFET PowerPAK SC-70-6L
Vishay
Vishay
SIA477EDJT-T1-GE3 MOSFET P-CH 12V 12A SC70-6
SIA472EDJ-T1-GE3 MOSFET N-CH 30V 12A SC70-6
SIA477EDJ-T1-GE3 Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 EP
SIA471DJ-T1-GE3 MOSFET P-CH 30V PPAK SC-70-6L
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