PartNumber | SIA415DJ-T1-GE3 | SIA415DJ-T1-GE3-CUT TAPE | SIA415DJ-E3 |
Description | IGBT Transistors MOSFET 20V 12A 19W 35mohm @ 4.5V | ||
Manufacturer | VISHAY | - | - |
Product Category | FETs - Single | - | - |
Series | TrenchFETR | - | - |
Packaging | Digi-ReelR Alternate Packaging | - | - |
Part Aliases | SIA415DJ-GE3 | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | PowerPAKR SC-70-6 | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Number of Channels | 1 Channel | - | - |
Supplier Device Package | PowerPAKR SC-70-6 Single | - | - |
Configuration | Single | - | - |
FET Type | MOSFET P-Channel, Metal Oxide | - | - |
Power Max | 19W | - | - |
Transistor Type | 1 P-Channel | - | - |
Drain to Source Voltage Vdss | 20V | - | - |
Input Capacitance Ciss Vds | 1250pF @ 10V | - | - |
FET Feature | Standard | - | - |
Current Continuous Drain Id 25°C | 12A (Tc) | - | - |
Rds On Max Id Vgs | 35 mOhm @ 5.6A, 4.5V | - | - |
Vgs th Max Id | 1.5V @ 250μA | - | - |
Gate Charge Qg Vgs | 47nC @ 10V | - | - |
Pd Power Dissipation | 19 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 20 ns | - | - |
Rise Time | 50 ns | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Id Continuous Drain Current | 12 A | - | - |
Vds Drain Source Breakdown Voltage | - 20 V | - | - |
Rds On Drain Source Resistance | 35 mOhms | - | - |
Transistor Polarity | P-Channel | - | - |
Typical Turn Off Delay Time | 45 ns | - | - |
Typical Turn On Delay Time | 25 ns | - | - |
Forward Transconductance Min | 20 S | - | - |
Channel Mode | Enhancement | - | - |