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| PartNumber | SI7945DP-T1-GE3 | SI7945DP-T1-E3 | SI7945DP |
| Description | MOSFET RECOMMENDED ALT 781-SI7997DP-T1-GE3 | IGBT Transistors MOSFET DUAL P-CH 30V (D-S) | |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR | - |
| Series | SI7 | TrenchFETR | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI7945DP-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Package Case | - | PowerPAKR SO-8 Dual | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAKR SO-8 Dual | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 1.4W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 7A | - |
| Rds On Max Id Vgs | - | 20 mOhm @ 10.9A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 74nC @ 10V | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7945DP-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI7997DP-T1-GE3 | |
Vishay |
SI7945DP-T1-GE3 | IGBT Transistors MOSFET Dual P-Ch 30V 20mohm @ 10V | |
| SI7945DP-T1-E3 | IGBT Transistors MOSFET DUAL P-CH 30V (D-S) | ||
| SI7945DP | Nuevo y original |