 | | |
| PartNumber | SI7923DN-T1-E3 | SI7923DN-T1-GE3 |
| Description | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.04 mm | 1.04 mm |
| Length | 3.3 mm | 3.3 mm |
| Series | SI7 | SI7 |
| Width | 3.3 mm | 3.3 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI7923DN-E3 | SI7923DN-GE3 |
| Number of Channels | - | 2 Channel |
| Transistor Polarity | - | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 30 V |
| Id Continuous Drain Current | - | 6.4 A |
| Rds On Drain Source Resistance | - | 47 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 21 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 2.8 W |
| Configuration | - | Dual |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 2 P-Channel |
| Forward Transconductance Min | - | 13 S |
| Fall Time | - | 28 ns |
| Rise Time | - | 12 ns |
| Typical Turn Off Delay Time | - | 38 ns |
| Typical Turn On Delay Time | - | 10 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7923DN-T1-E3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 | |
| SI7923DN-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 | ||
Vishay |
SI7923DN-T1-GE3 | RF Bipolar Transistors MOSFET 30V 6.4A 2.8W 47mohm @ 10V | |
| SI7923DN-T1-E3 | MOSFET 2P-CH 30V 4.3A 1212-8 | ||
| SI7923DN-T1-E3-CUT TAPE | Nuevo y original | ||
| SI7923DN-T1-E3CT-ND | Nuevo y original |