 |  | | |
| PartNumber | SI7898DP-T1-E3 | SI7898DP-T1 | SI7898DP-T1-E1 |
| Description | MOSFET 150V Vds 20V Vgs PowerPAK SO-8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 4.8 A | - | - |
| Rds On Drain Source Resistance | 85 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 17 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SI7 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 15 S | - | - |
| Fall Time | 17 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 24 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | SI7898DP-T1 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7898DP-T1-E3 | MOSFET 150V Vds 20V Vgs PowerPAK SO-8 | |
| SI7898DP-T1-GE3 | MOSFET 150V Vds 20V Vgs PowerPAK SO-8 | ||
| SI7898DP-T1 | Nuevo y original | ||
| SI7898DP-T1-E1 | Nuevo y original | ||
Vishay |
SI7898DP-T1-E3 | MOSFET N-CH 150V 3A PPAK SO-8 | |
| SI7898DP-T1-GE3 | MOSFET N-CH 150V 3A PPAK SO-8 |