PartNumber | SI7840BDP-T1-GE3 | SI7840BDP-T1-E3 | SI7840BDP |
Description | MOSFET 30V 16.5A 4.1W 8.5mohm @ 10V | RF Bipolar Transistors MOSFET 30V 14A 4.1W 8.5mohm @ 10V | |
Manufacturer | Vishay | VISHAY | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | E | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-SO-8 | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Reel | - |
Height | 1.04 mm | - | - |
Length | 6.15 mm | - | - |
Series | SI7 | - | - |
Width | 5.15 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI7840BDP-GE3 | - | - |
Unit Weight | 0.017870 oz | 0.017870 oz | - |
Part Aliases | - | SI7840BDP-E3 | - |
Package Case | - | SO-8 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 1.8 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 14 ns | - |
Rise Time | - | 14 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 11 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Rds On Drain Source Resistance | - | 8.5 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 39 ns | - |
Typical Turn On Delay Time | - | 17 ns | - |
Channel Mode | - | Enhancement | - |