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| PartNumber | SI7802DN-T1-GE3 | SI7802DN | SI7802DN-T1-E3 |
| Description | MOSFET 250V 1.95A 3.8W 435mohm @ 10V | MOSFET N-CH 250V 1.24A 1212-8 | |
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | MOSFET (Metal Oxide) | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | PowerPAK 1212-8 | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Cut Tape (CT) | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SI7 | TrenchFET | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI7802DN-GE3 | - | - |
| Unit Weight | 0.005362 oz | - | - |
| Part Status | - | Obsolete | - |
| FET Type | - | N-Channel | - |
| Drain to Source Voltage (Vdss) | - | 250V | - |
| Current Continuous Drain (Id) @ 25°C | - | 1.24A (Ta) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - | 6V, 10V | - |
| Vgs(th) (Max) @ Id | - | 3.6V @ 250A | - |
| Gate Charge (Qg) (Max) @ Vgs | - | 21nC @ 10V | - |
| Vgs (Max) | - | ±20V | - |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | 1.5W (Ta) | - |
| Rds On (Max) @ Id, Vgs | - | 435 mOhm @ 1.95A, 10V | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAK 1212-8 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7802DN-T1-GE3 | MOSFET 250V 1.95A 3.8W 435mohm @ 10V | |
Vishay |
SI7802DN-T1-GE3 | IGBT Transistors MOSFET 250V 1.95A 3.8W 435mohm @ 10V | |
| SI7802DN-T1-E3 | MOSFET N-CH 250V 1.24A 1212-8 | ||
| SI7802DN | Nuevo y original | ||
| SI7802DN-T1-GE3CT | Nuevo y original |