PartNumber | SI7214DN-T1-E3 | SI7214DN-T1-GE3 | SI7214DN-T1-E3 GE3 |
Description | MOSFET RECOMMENDED ALT 781-SI7228DN-GE3 | RF Bipolar Transistors MOSFET 30V 6.4A 2.6W 40mohm @ 10V | |
Manufacturer | Vishay | Vishay Siliconix | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | E | - | - |
Technology | Si | Si | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Tape & Reel (TR) | - |
Series | SI7 | TrenchFETR | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI7214DN-E3 | - | - |
Part Aliases | - | SI7214DN-GE3 | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | PowerPAKR 1212-8 Dual | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Number of Channels | - | 2 Channel | - |
Supplier Device Package | - | PowerPAKR 1212-8 Dual | - |
Configuration | - | Dual | - |
FET Type | - | 2 N-Channel (Dual) | - |
Power Max | - | 1.3W | - |
Transistor Type | - | 2 N-Channel | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 4.6A | - |
Rds On Max Id Vgs | - | 40 mOhm @ 6.4A, 10V | - |
Vgs th Max Id | - | 3V @ 250μA | - |
Gate Charge Qg Vgs | - | 6.5nC @ 4.5V | - |
Pd Power Dissipation | - | 1.3 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 6 ns | - |
Rise Time | - | 10 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 4.6 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Rds On Drain Source Resistance | - | 40 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 19 ns | - |
Typical Turn On Delay Time | - | 7 ns | - |
Channel Mode | - | Enhancement | - |