SI7214DN-T1

SI7214DN-T1-E3 vs SI7214DN-T1-GE3 vs SI7214DN-T1-E3 GE3

 
PartNumberSI7214DN-T1-E3SI7214DN-T1-GE3SI7214DN-T1-E3 GE3
DescriptionMOSFET RECOMMENDED ALT 781-SI7228DN-GE3RF Bipolar Transistors MOSFET 30V 6.4A 2.6W 40mohm @ 10V
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Arrays-
RoHSE--
TechnologySiSi-
TradenameTrenchFET--
PackagingReelTape & Reel (TR)-
SeriesSI7TrenchFETR-
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI7214DN-E3--
Part Aliases-SI7214DN-GE3-
Mounting Style-SMD/SMT-
Package Case-PowerPAKR 1212-8 Dual-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-2 Channel-
Supplier Device Package-PowerPAKR 1212-8 Dual-
Configuration-Dual-
FET Type-2 N-Channel (Dual)-
Power Max-1.3W-
Transistor Type-2 N-Channel-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds---
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-4.6A-
Rds On Max Id Vgs-40 mOhm @ 6.4A, 10V-
Vgs th Max Id-3V @ 250μA-
Gate Charge Qg Vgs-6.5nC @ 4.5V-
Pd Power Dissipation-1.3 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-6 ns-
Rise Time-10 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-4.6 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-40 mOhms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-19 ns-
Typical Turn On Delay Time-7 ns-
Channel Mode-Enhancement-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7214DN-T1-E3 MOSFET RECOMMENDED ALT 781-SI7228DN-GE3
Vishay
Vishay
SI7214DN-T1-GE3 RF Bipolar Transistors MOSFET 30V 6.4A 2.6W 40mohm @ 10V
SI7214DN-T1-E3 MOSFET 2N-CH 30V 4.6A 1212-8
SI7214DN-T1-E3 GE3 Nuevo y original
SI7214DN-T1-E3CT-ND Nuevo y original
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