SI7113

SI7113DN-T1-E3 vs SI7113ADN-T1-GE3 vs SI7113DN

 
PartNumberSI7113DN-T1-E3SI7113ADN-T1-GE3SI7113DN
DescriptionMOSFET -100V Vds 20V Vgs PowerPAK 1212-8MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8PowerPAK-1212-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current13.2 A10.8 A-
Rds On Drain Source Resistance134 mOhms186 mOhms-
Vgs th Gate Source Threshold Voltage1 V1.1 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge35 nC5.65 nC-
Minimum Operating Temperature- 50 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation52 W27.8 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReelReel-
Height1.04 mm--
Length3.3 mm--
SeriesSI7Si7113ADN-
Transistor Type1 P-Channel--
Width3.3 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min25 S8 S-
Fall Time10 ns1622 ns-
Product TypeMOSFETMOSFET-
Rise Time13 ns40 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time42 ns22 ns-
Typical Turn On Delay Time11 ns35 ns-
Part # AliasesSI7113DN-E3--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7113DN-T1-E3 MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
SI7113DN-T1-GE3 MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
SI7113ADN-T1-GE3 MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
SI7113DN-T1-E3-CUT TAPE Nuevo y original
SI7113DN-T1-GE3-CUT TAPE Nuevo y original
SI7113DN Nuevo y original
SI7113DN-TI-E3 Nuevo y original
SI7113DN-TI-GE3 Nuevo y original
Vishay
Vishay
SI7113DN-T1-GE3 MOSFET P-CH 100V 13.2A 1212-8
SI7113ADN-T1-GE3 MOSFET P-CH 100V 10.8A 1212-8
SI7113DN-T1-E3 Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R
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