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| PartNumber | SI5445BDC-T1-E3 | SI5445BDC-T1-GE3 | SI5445DC-T1 |
| Description | IGBT Transistors MOSFET 8.0 Volt 7.1 Amp 2.1 | MOSFET P-CH 8V 5.2A 1206-8 | 5200 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SI5445BDC-E3 | - | - |
| Unit Weight | 0.002998 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | ChipFET-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 22 ns | - | - |
| Rise Time | 22 ns | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Id Continuous Drain Current | 5.2 A | - | - |
| Vds Drain Source Breakdown Voltage | - 8 V | - | - |
| Rds On Drain Source Resistance | 33 mOhms | - | - |
| Transistor Polarity | P-Channel | - | - |
| Typical Turn Off Delay Time | 75 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay |
SI5445BDC-T1-E3 | IGBT Transistors MOSFET 8.0 Volt 7.1 Amp 2.1 | |
| SI5445BDC-T1-GE3 | MOSFET P-CH 8V 5.2A 1206-8 | ||
| SI5445DC-T1 | 5200 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | ||
| SI5445DC-T1-E3 | MOSFET RECOMMENDED ALT 781-SI5475DDC-T1-GE3 | ||
| SI5445DC-T1-GE3 | Nuevo y original |