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| PartNumber | SI4910DY-T1-GE3 | SI4910DY-T1-E3 | SI4910DY |
| Description | MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 | IGBT Transistors MOSFET DUAL N-CH 40V(D-S) | |
| Manufacturer | Vishay | Vishay Siliconix | Vishay Siliconix |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR | Digi-ReelR |
| Series | SI4 | TrenchFETR | TrenchFETR |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI4910DY-GE3 | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | 8-SO | 8-SO |
| FET Type | - | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Power Max | - | 3.1W | 3.1W |
| Drain to Source Voltage Vdss | - | 40V | 40V |
| Input Capacitance Ciss Vds | - | 855pF @ 20V | 855pF @ 20V |
| FET Feature | - | Standard | Standard |
| Current Continuous Drain Id 25°C | - | 7.6A | 7.6A |
| Rds On Max Id Vgs | - | 27 mOhm @ 6A, 10V | 27 mOhm @ 6A, 10V |
| Vgs th Max Id | - | 2V @ 250μA | 2V @ 250μA |
| Gate Charge Qg Vgs | - | 32nC @ 10V | 32nC @ 10V |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4910DY-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 | |
Vishay |
SI4910DY-T1-E3 | IGBT Transistors MOSFET DUAL N-CH 40V(D-S) | |
| SI4910DY-T1-GE3 | MOSFET 2N-CH 40V 7.6A 8-SOIC | ||
| SI4910DY | Nuevo y original |