 |  | | |
| PartNumber | SI4909DY-T1-GE3 | SI4909DY | SI4909DY-T1-E3 |
| Description | MOSFET -40V Vds 20V Vgs SO-8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 27 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 63 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI4 | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 22 S | - | - |
| Fall Time | 18 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 42 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4909DY-T1-GE3 | MOSFET -40V Vds 20V Vgs SO-8 | |
| SI4909DY-T1-GE3-CUT TAPE | Nuevo y original | ||
| SI4909DY | Nuevo y original | ||
| SI4909DY-T1-E3 | Nuevo y original | ||
| SI4909DY-T1-GE3CT | Nuevo y original | ||
Vishay |
SI4909DY-T1-GE3 | MOSFET 2P-CH 40V 8A 8SO |