 | | | |
| PartNumber | SI4906 | SI4906BDY-T1-E3 | SI4906DY |
| Description | |||
| Manufacturer | Vishay Siliconix | - | - |
| Product Category | FETs - Arrays | - | - |
| Series | TrenchFETR | - | - |
| Packaging | Digi-ReelR | - | - |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | 8-SO | - | - |
| FET Type | 2 N-Channel (Dual) | - | - |
| Power Max | 3.1W | - | - |
| Drain to Source Voltage Vdss | 40V | - | - |
| Input Capacitance Ciss Vds | 625pF @ 20V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 6.6A | - | - |
| Rds On Max Id Vgs | 39 mOhm @ 5A, 10V | - | - |
| Vgs th Max Id | 2.2V @ 250μA | - | - |
| Gate Charge Qg Vgs | 22nC @ 10V | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4906DY-T1-E3 | MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 | |
Vishay |
SI4906DY-T1-E3 | IGBT Transistors MOSFET DUAL N-CH 40V(D-S) | |
| SI4906DY-T1-GE3 | MOSFET 2N-CH 40V 6.6A 8-SOIC | ||
| SI4906 | Nuevo y original | ||
| SI4906BDY-T1-E3 | Nuevo y original | ||
| SI4906DY | Nuevo y original | ||
| SI4906DY-T1 | Nuevo y original | ||
| SI4906DYT1GE3 | Small Signal Field-Effect Transistor, 5.3A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |