PartNumber | SI4823DY-T1 | SI4823DY-T1-E3 | SI4823DY-T1-GE3 |
Description | MOSFET P-CH 20V 4.1A 8-SOIC | MOSFET P-CH 20V 4.1A 8-SOIC | |
Manufacturer | - | VISHAY | - |
Product Category | - | FETs - Single | - |
Packaging | - | Reel | - |
Part Aliases | - | SI4823DY-E3 | - |
Unit Weight | - | 0.006596 oz | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | SOIC-Narrow-8 | - |
Technology | - | Si | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single with Schottky Diode | - |
Transistor Type | - | 1 P-Channel | - |
Pd Power Dissipation | - | 2.8 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 40 ns | - |
Rise Time | - | 40 ns | - |
Vgs Gate Source Voltage | - | 12 V | - |
Id Continuous Drain Current | - | 3.3 A | - |
Vds Drain Source Breakdown Voltage | - | - 20 V | - |
Rds On Drain Source Resistance | - | 108 mOhms | - |
Transistor Polarity | - | P-Channel | - |
Typical Turn Off Delay Time | - | 18 ns | - |
Typical Turn On Delay Time | - | 18 ns | - |
Channel Mode | - | Enhancement | - |