 | |  | |
| PartNumber | SI4823DY | SI4823DY-T1 | SI4823DY-T1-E3 |
| Description | MOSFET P-CH 20V 4.1A 8-SOIC | ||
| Manufacturer | - | - | VISHAY |
| Product Category | - | - | FETs - Single |
| Packaging | - | - | Reel |
| Part Aliases | - | - | SI4823DY-E3 |
| Unit Weight | - | - | 0.006596 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOIC-Narrow-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single with Schottky Diode |
| Transistor Type | - | - | 1 P-Channel |
| Pd Power Dissipation | - | - | 2.8 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 40 ns |
| Rise Time | - | - | 40 ns |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 3.3 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 108 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 18 ns |
| Typical Turn On Delay Time | - | - | 18 ns |
| Channel Mode | - | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| SI4823DY | Nuevo y original | ||
| SI4823DY-T1 | Nuevo y original | ||
Vishay |
SI4823DY-T1-E3 | MOSFET P-CH 20V 4.1A 8-SOIC | |
| SI4823DY-T1-GE3 | MOSFET P-CH 20V 4.1A 8-SOIC |