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| PartNumber | SI4808DY-T1-GE3 | SI4808DY-T1 | SI4808DY-T1-E3 |
| Description | MOSFET 30V 7.5A 2.0W 22mohm @ 10V | MOSFET 30V 7.5A 2W | MOSFET 2N-CH 30V 5.7A 8SOIC |
| Manufacturer | Vishay | VISHAY | Vishay Siliconix |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | Tape & Reel (TR) |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI4 | - | LITTLE FOOTR |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI4808DY-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 1.1W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 5.7A |
| Rds On Max Id Vgs | - | - | 22 mOhm @ 7.5A, 10V |
| Vgs th Max Id | - | - | 800mV @ 250μA (Min) |
| Gate Charge Qg Vgs | - | - | 20nC @ 10V |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4808DY-T1-GE3 | MOSFET 30V 7.5A 2.0W 22mohm @ 10V | |
Vishay |
SI4808DY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 7.5A 2.0W 22mohm @ 10V | |
| SI4808DY-T1-E3 | MOSFET 2N-CH 30V 5.7A 8SOIC | ||
| SI4808DY-T1 | MOSFET 30V 7.5A 2W |