SI4808D

SI4808DY vs SI4808DY-T1 vs SI4808DY-T1-E3

 
PartNumberSI4808DYSI4808DY-T1SI4808DY-T1-E3
DescriptionMOSFET 30V 7.5A 2WMOSFET 30V 7.5A 2WMOSFET 2N-CH 30V 5.7A 8SOIC
Manufacturer-VISHAYVishay Siliconix
Product Category-FETs - ArraysFETs - Arrays
Series--LITTLE FOOTR
Packaging--Tape & Reel (TR)
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--2 N-Channel (Dual)
Power Max--1.1W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds---
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--5.7A
Rds On Max Id Vgs--22 mOhm @ 7.5A, 10V
Vgs th Max Id--800mV @ 250μA (Min)
Gate Charge Qg Vgs--20nC @ 10V
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4808DY-T1-GE3 MOSFET 30V 7.5A 2.0W 22mohm @ 10V
Vishay
Vishay
SI4808DY-T1-GE3 RF Bipolar Transistors MOSFET 30V 7.5A 2.0W 22mohm @ 10V
SI4808DY-T1-E3 MOSFET 2N-CH 30V 5.7A 8SOIC
SI4808DY MOSFET 30V 7.5A 2W
SI4808DY-T1 MOSFET 30V 7.5A 2W
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