PartNumber | SI4320DY-T1-GE3 | SI4320DY-T1-E3 | SI4320DY |
Description | MOSFET RECOMMENDED ALT 781-SI4126DY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 25A 3.5W 3.0mohm @ 10V | |
Manufacturer | Vishay | VISHAY | SILICON |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | E | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Reel | - |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Series | SI4 | - | - |
Width | 3.9 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI4320DY-GE3 | - | - |
Unit Weight | 0.006596 oz | 0.006596 oz | - |
Part Aliases | - | SI4320DY-E3 | - |
Package Case | - | SOIC-Narrow-8 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 1.6 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 21 ns | - |
Rise Time | - | 21 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 17 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Rds On Drain Source Resistance | - | 3 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 107 ns | - |
Typical Turn On Delay Time | - | 27 ns | - |
Channel Mode | - | Enhancement | - |