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| PartNumber | SI4210DY | SI4210DY-T1-E3 | SI4210DY-T1-GE3 |
| Description | MOSFET 2N-CH 30V 6.5A 8-SOIC | ||
| Manufacturer | - | - | Vishay Siliconix |
| Product Category | - | - | FETs - Arrays |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | SI4210DY-GE3 |
| Unit Weight | - | - | 0.017870 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | 8-SO |
| Configuration | - | - | Dual |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 2.7W |
| Transistor Type | - | - | 2 N-Channel |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 445pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 6.5A |
| Rds On Max Id Vgs | - | - | 35.5 mOhm @ 5A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 12nC @ 10V |
| Pd Power Dissipation | - | - | 2.7 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 6.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 35.5 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| SI4210DY | Nuevo y original | ||
| SI4210DY-T1-E3 | Nuevo y original | ||
Vishay |
SI4210DY-T1-GE3 | MOSFET 2N-CH 30V 6.5A 8-SOIC |