SI3493D

SI3493DDV-T1-GE3 vs SI3493DV-T1-GE3 vs SI3493DV-T1-E3

 
PartNumberSI3493DDV-T1-GE3SI3493DV-T1-GE3SI3493DV-T1-E3
DescriptionMOSFET -20V Vds 8V Vgs TSOP-6MOSFET P-Ch MOSFET TSOP-6 20V 27mohm @ 4.5VMOSFET RECOMMENDED ALT 781-SI3493BDV-GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTSOP-6TSOP-6TSOP-6
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance20 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge52.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Reel
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min30 S--
Fall Time40 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time20 ns--
Factory Pack Quantity3000-3000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time115 ns--
Typical Turn On Delay Time8 ns--
Part # Aliases-SI3493DV-GE3SI3493DV-E3
Unit Weight-0.000705 oz0.000705 oz
Tradename--TrenchFET
Series--SI3
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI3493DDV-T1-GE3 MOSFET -20V Vds 8V Vgs TSOP-6
SI3493DV-T1-GE3 MOSFET P-Ch MOSFET TSOP-6 20V 27mohm @ 4.5V
SI3493DV-T1-E3 MOSFET RECOMMENDED ALT 781-SI3493BDV-GE3
Vishay
Vishay
SI3493DV-T1-E3 IGBT Transistors MOSFET 20V 7.0A 2.0W 27mohm @ 4.5V
SI3493DDV-T1-GE3 MOSFET P-CHANNEL 20V 8A 6TSOP
SI3493DV-T1-GE3 MOSFET P-CH 20V 5.3A 6-TSOP
SI3493DV Nuevo y original
SI3493DV-E3 Nuevo y original
SI3493DV-T1 MOSFET RECOMMENDED ALT 781-SI3493BDV-T1-E3
SI3493DV-T1-E3. Nuevo y original
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