SI3459BDV

SI3459BDV-T1-GE3 vs SI3459BDV-T1-E3 vs SI3459BDV-T1-E

 
PartNumberSI3459BDV-T1-GE3SI3459BDV-T1-E3SI3459BDV-T1-E
DescriptionMOSFET -60V Vds 20V Vgs TSOP-6MOSFET -60V Vds 20V Vgs TSOP-6
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current2.9 A--
Rds On Drain Source Resistance216 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge7.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.05 mm3.05 mm-
SeriesSI3SI3-
Transistor Type1 P-Channel--
Width1.65 mm1.65 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min4 S--
Fall Time10 ns--
Product TypeMOSFETMOSFET-
Rise Time12 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesSI3459BDV-GE3SI3459BDV-E3-
Unit Weight0.000705 oz0.000705 oz-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI3459BDV-T1-GE3 MOSFET -60V Vds 20V Vgs TSOP-6
SI3459BDV-T1-E3 MOSFET -60V Vds 20V Vgs TSOP-6
SI3459BDV-T1-E Nuevo y original
SI3459BDVT1E3 Small Signal Field-Effect Transistor, 0.0022A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SI3459BDV-T1-GE3-CUT TAPE Nuevo y original
Vishay
Vishay
SI3459BDV-T1-E3 MOSFET P-CH 60V 2.9A 6-TSOP
SI3459BDV-T1-GE3 MOSFET P-CH 60V 2.9A 6-TSOP
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