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| PartNumber | SI3457CDV-T1-GE3 | SI3457CDV-T1-E3 |
| Description | MOSFET -30V Vds 20V Vgs TSOP-6 | MOSFET -30V Vds 20V Vgs TSOP-6 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 5.1 A | - |
| Rds On Drain Source Resistance | 74 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 10 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.1 mm | - |
| Length | 3.05 mm | - |
| Series | SI3 | SI3 |
| Transistor Type | 1 P-Channel | - |
| Width | 1.65 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 8 S | - |
| Fall Time | 10 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 13 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | - |
| Typical Turn On Delay Time | 5 ns | - |
| Part # Aliases | SI3457BDV-T1-E3-S | SI3457CDV-E3 |
| Unit Weight | 0.000705 oz | 0.000705 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3457CDV-T1-GE3 | MOSFET -30V Vds 20V Vgs TSOP-6 | |
| SI3457CDV-T1-E3 | MOSFET -30V Vds 20V Vgs TSOP-6 | ||
Vishay |
SI3457CDV-T1-E3 | MOSFET P-CH 30V 5.1A 6-TSOP | |
| SI3457CDV-T1-GE3 | MOSFET P-CH 30V 5.1A 6-TSOP | ||
| SI3457CDV-TI-E3 | Nuevo y original | ||
| SI3457CDV-T1-GE3-CUT TAPE | Nuevo y original |