 | | |
| PartNumber | SI3456DDV-T1-GE3 | SI3456DDV-T1-E3 |
| Description | MOSFET 30V Vds 20V Vgs TSOP-6 | MOSFET 30V Vds 20V Vgs TSOP-6 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 6.3 A | - |
| Rds On Drain Source Resistance | 40 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 6 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2.7 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI3 | SI3 |
| Transistor Type | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 15 S | - |
| Fall Time | 11 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | - |
| Typical Turn On Delay Time | 4 ns | - |
| Part # Aliases | SI3456DDV-GE3 | SI3456DDV-E3 |
| Unit Weight | 0.000705 oz | 0.000705 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3456DDV-T1-GE3 | MOSFET 30V Vds 20V Vgs TSOP-6 | |
| SI3456DDV-T1-E3 | MOSFET 30V Vds 20V Vgs TSOP-6 | ||
Vishay |
SI3456DDV-T1-E3 | MOSFET N-CH 30V 6.3A 6TSOP | |
| SI3456DDV-T1-GE3 | MOSFET N-CH 30V 6.3A 6-TSOP | ||
| SI3456DDV-T1-GT3 | Nuevo y original | ||
| SI3456DDV-TI-QE3 | Nuevo y original | ||
| SI3456DDV-T1-GE3-CUT TAPE | Nuevo y original |