 | | |
| PartNumber | SI3440DV-T1-GE3 | SI3440DV-T1-E3 |
| Description | MOSFET 150V Vds 20V Vgs TSOP-6 | MOSFET 150V Vds 20V Vgs TSOP-6 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.1 mm | - |
| Length | 3.05 mm | - |
| Series | SI3 | SI3 |
| Width | 1.65 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI3440DV-GE3 | SI3440DV-E3 |
| Unit Weight | 0.000705 oz | 0.000705 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Id Continuous Drain Current | - | 1.5 A |
| Rds On Drain Source Resistance | - | 375 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Vgs Gate Source Voltage | - | 10 V |
| Qg Gate Charge | - | 5.4 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 2 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Forward Transconductance Min | - | 4.1 S |
| Fall Time | - | 15 ns |
| Rise Time | - | 10 ns |
| Typical Turn Off Delay Time | - | 20 ns |
| Typical Turn On Delay Time | - | 8 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3440DV-T1-GE3 | MOSFET 150V Vds 20V Vgs TSOP-6 | |
| SI3440DV-T1-E3 | MOSFET 150V Vds 20V Vgs TSOP-6 | ||
Vishay |
SI3440DV-T1-GE3 | MOSFET N-CH 150V 1.2A 6-TSOP | |
| SI3440DV-T1-E3 | MOSFET N-CH 150V 1.2A 6-TSOP | ||
| SI3440DV-T1-E3-CUT TAPE | Nuevo y original | ||
| SI3440DV-T1-GE3-CUT TAPE | Nuevo y original |