SI232

SI2329DS-T1-GE3 vs SI2328DS-T1-E3 vs SI2328DS-T1-GE3

 
PartNumberSI2329DS-T1-GE3SI2328DS-T1-E3SI2328DS-T1-GE3
DescriptionMOSFET -8V Vds 5V Vgs SOT-23MOSFET 100V Vds 20V Vgs SOT-23MOSFET 100V Vds 20V Vgs SOT-23
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3SOT-23-3
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-N-Channel
Vds Drain Source Breakdown Voltage8 V-100 V
Id Continuous Drain Current6 A-1.15 A
Rds On Drain Source Resistance30 mOhms-250 mOhms
Vgs th Gate Source Threshold Voltage350 mV-2 V
Vgs Gate Source Voltage4.5 V-10 V
Qg Gate Charge19.3 nC-3.3 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.5 W-0.73 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSI2SI2SI2
Transistor Type1 P-Channel-1 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min2 S-4 S
Fall Time20 ns-10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time22 ns-11 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time46 ns-9 ns
Typical Turn On Delay Time20 ns-7 ns
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Height-1.45 mm1.45 mm
Length-2.9 mm2.9 mm
Width-1.6 mm1.6 mm
Part # Aliases-SI2328DS-E3SI2328DS-GE3
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2329DS-T1-GE3 MOSFET -8V Vds 5V Vgs SOT-23
SI2328DS-T1-GE3 MOSFET 100V Vds 20V Vgs SOT-23
Vishay
Vishay
SI2328DS-T1-GE3 MOSFET N-CH 100V 1.15A SOT-23
SI2329DS-T1-GE3 MOSFET P-CH 8V 6A SOT-23
SI2328DS-T1-E3 Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
SI2329DS-T1 Nuevo y original
SI2328DS-T1-E3-CUT TAPE Nuevo y original
SI2328DS-T1-GE3-CUT TAPE Nuevo y original
SI232C Nuevo y original
Top